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AOND32324 general description product summary q1 q2 v ds 30v -30v i d (at v gs =10v) 16a -16a r ds(on) (at v gs =10v) < 14m? < 12m? r ds(on) (at v gs =4.5v) < 18m? < 19.5m? applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol typ q1 typ q2 max q1 max q2 t 10s 25 20 35 30 steady-state 50 48 70 65 steady-state r jc 7 3.5 10 4.2 3000 ? motor drive ? dc-fan orderable part number package type form minimum order q uantity va absolute maximum ratings t a =25c unless otherwise noted v units i d 20 16 t c =100c -30 gate-source voltage t c =25c -65 25 -16 maximum junction-to-case c/w c/w maximum junction-to-ambient a d w i dsm maximum junction-to-ambient a c/w 30 t c =25c avalanche current c continuous drain current continuous drain current g r ja thermal characteristics parameter t a =70c c units junction and storage temperature range -55 to 150 p dsm w t a =25c power dissipation a 2.6 3.5 2.2 4.1 t a =25c p d pulsed drain current c 13 t a =70c power dissipation b t c =100c 54 a a 24 5 12 mj -15 -12 12.5 30v dual complementary mosfet -16 10 22 33 16 50 ? pch+nch complementary mosfet ? trench power mosfet ? low r ds(on) ? low gate charge ? excellent thermal performance ? rohs and halogen free compliant max q1 max q2 30 parameter drain-source voltage AOND32324 dfn 5x6 tape & reel top view 12 3 4 87 6 5 s1 g1 s2 g2 d1 d1 d2 d2 g1 d1 s1 dfn5x6 ep2 pin1 g2 d2 s2 rev.1.0: octomber 2017 www.aosmd.com page 1 of 11 downloaded from: http:///
AOND32324 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 1.9 2.5 v 11 14 t j =125c 16 20 14 18 m? g fs 43 s v sd 0.75 1 v i s 10 a c iss 760 pf c oss 125 pf c rss 70 pf r g 0.8 1.6 2.4 ? q g (10v) 14 20 nc q g (4.5v) 6.6 10 nc q gs 2.4 nc q gd 3 nc t d(on) 4.4 ns t r 9 ns t d(off) 17 ns t f 6 ns t rr 7 ns q rr 8 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz v ds =v gs, i d =250 a output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =12a v gs =10v, i d =12a v ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current body diode reverse recovery charge body diode reverse recovery time i f =12a, di/dt=500a/ s turn-off delaytime turn-off fall time v gs =10v, v ds =15v, r l =1.25 , r gen =3 diode forward voltage dynamic parameters v gs =4.5v, i d =10a i f =12a, di/dt=500a/ s turn-on rise time gate source charge gate drain charge total gate charge switching parameters turn-on delaytime m? v gs =10v, v ds =15v, i d =12a total gate charge q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage id=250a, vgs=0v r ds(on) static drain-source on-resistance a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.1.0: octomber 2017 www.aosmd.com page 2 of 11 downloaded from: http:///
AOND32324 typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 0 5 10 15 20 r ds(on) (m ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =10a v gs =10v i d =12a 0 10 20 30 40 2 4 6 8 10 r ds(on) (m ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =12a 25 c 125 c 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =3v 3.5v 4.5v 10v rev.1.0: octomber 2017 www.aosmd.com page 3 of 11 downloaded from: http:///
AOND32324 typical electrical and thermal characteristics 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =15v i d =12a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) 10 s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 10ms r jc =10 c/w rev.1.0: octomber 2017 www.aosmd.com page 4 of 11 downloaded from: http:///
AOND32324 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 3 6 9 12 15 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 4 8 12 16 20 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) t a =25 c r ja =70 c/w rev.1.0: octomber 2017 www.aosmd.com page 5 of 11 downloaded from: http:///
AOND32324 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.3 -1.8 -2.3 v 10 12 t j =125c 14 16.8 15.4 19.5 m? g fs 43 s v sd -0.7 -1 v i s -16 a c iss 1995 pf c oss 300 pf c rss 260 pf r g 4.5 9 ? q g (10v) 35 50 nc q g (4.5v) 17 25 nc q gs 5.7 nc q gd 8.8 nc t d(on) 11 ns t r 7.5 ns t d(off) 43.5 ns t f 17.5 ns t rr 13.3 ns q rr 20 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. q2 electrical characteristics (t j =25c unless otherwise noted) parameter conditions r ds(on) static drain-source on-resistance v gs =-10v, i d =-16a static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current a m? diode forward voltage i s =-1a, v gs =0v gate-body leakage current v ds =0v, v gs =25v v ds =v gs, i d =-250 a v gs =-4.5v, i d =-12a forward transconductance v ds =-5v, i d =-16a maximum body-diode continuous current g dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz output capacitance reverse transfer capacitance gate resistance f=1mhz switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-16a total gate charge gate source charge gate drain charge body diode reverse recovery charge i f =-16a, di/dt=500a/ s turn-on delaytime v gs =-10v, v ds =-15v, r l =0.9 , r gen =3 turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-16a, di/dt=500a/ s a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.1.0: octomber 2017 www.aosmd.com page 6 of 11 downloaded from: http:///
AOND32324 typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 25 0 5 10 15 20 25 30 r ds(on) (m ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-12a v gs =-10v i d =-16a 0 10 20 30 40 2 4 6 8 10 r ds(on) (m ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v i d =-16a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 -i d (a) -v ds (volts) figure 1: on-region characteristics (note e) v gs =-3v -3.5v -4.5v -10v - 4v rev.1.0: octomber 2017 www.aosmd.com page 7 of 11 downloaded from: http:///
AOND32324 typical electrical and thermal characteristics 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0 2 4 6 8 10 0 10 20 30 40 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =-15v i d =-16a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v gs > or equal to -4.5v figure 9: maximum forward biased safe operating area (note f) 10 s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 10ms -v ds (volts) r jc =4.2 c/w t on t p dm rev.1.0: octomber 2017 www.aosmd.com page 8 of 11 downloaded from: http:///
AOND32324 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 5 10 15 20 0 25 50 75 100 125 150 current rating -i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) t a =25 c t on t p dm d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =65 c/w rev.1.0: octomber 2017 www.aosmd.com page 9 of 11 downloaded from: http:///
AOND32324 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & wavefor ms figure c: unclamped inductive switching (uis) test c ircuit & waveforms figure d: diode recovery test circuit & waveforms rev.1.0: octomber 2017 www.aosmd.com page 10 of 11 downloaded from: http:///
AOND32324 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev.1.0: octomber 2017 www.aosmd.com page 11 of 11 downloaded from: http:///

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